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  SIR-56ST3F sensors 1/3 infrared light emitting diode, top view type SIR-56ST3F the SIR-56ST3F is a gaas infrared light emitting diode housed in clear plastic. this device has a high luminous efficiency and a 950nm spectrum suitable for silicon detectors. low cost make it an ideal light source for household remote control devices. ! ! ! ! applications optical control equipment light source for remote control devices ! ! ! ! features 1) high efficiency, high output p o = 8.0mw (i f = 50ma). 2) emission spectrum well suited to silicon detectors. 3) good current-optical output linearity. 4) long life, high reliability. ! ! ! ! external dimensions (units : mm) 2 ? 0.5 min.24 8.7 0.3 2.5 1 max.1 1 5.0 0.2 6 0.3 (2.5) 2 ? 0.6 notes: 1. unspecified tolerance shall be 0.2. 2. dimension in parenthesis are show for reference. 1 1 anode 2 2 cathode ! ! ! ! absolute maximum ratings (ta = 25 c) parameter symbol p d i f i fp ? v r topr tstg limits ? 25~ + 85 ? 40~ + 85 100 5 160 1.0 unit ma v mw a c c forward current reverse voltage power dissipation pulse forward current operating temperature storage temperature ? pulse width = 0.1msec, duty ratio 1%
SIR-56ST3F sensors 2/3 ! ! ! ! electrical and optical characteristics (ta = 25 c) parameter symbol p o i e f c i r v f ? p 1 / 2 trtf min. ? 5.6 ? ? ? ? ? ? ? typ. 8.0 ? 1.3 ? 950 40 15 1.0 1.0 max. ? 1.6 ? 10 ? ? ? ? ? unit mw mw/sr i f = 50ma i f = 50ma i f = 100ma v r = 3v i f = 50ma i f = 50ma i f = 50ma i f = 50ma i f = 50ma a nm nm v deg mhz s conditions optical output emitting strength forward voltage reverse current peak light emitting wavelength spectral line half width half-viewing angle pesponse time cut-off frequency ! ! ! ! electrical and optical characteristic curves forward current : i f (ma) ambient temperature : ta ( c) ? 20 0 40 60 80 20 100 0 40 20 60 80 100 fig.1 forward current falloff forward voltage : v f (v) forward current : i f ( ma ) 0 20 40 60 80 100 012 75 c 50 c 25 c 0 c ? 25 c fig.2 forward current vs. forward voltage relative optical output : p o (%) optical wavelength : (nm) 900 920 940 960 980 1000 0 20 40 60 80 100 fig.3 wavelength emitting strength : i e (mw/sr) forward current : i f (ma) 0 20406080100 10 30 50 70 90 0 10 20 fig.4 emitting strength vs. forward current relative emitting strength : i e (%) ambient temperature : ta ( c) 0 ? 25 25 100 50 75 10 20 50 100 200 fig.5 relative emitting strength vs. ambient temperature
SIR-56ST3F sensors 3/3 0 100 80 60 40 20 20 40 60 80 100 relative emitting strength (%) amgular displacement : (deg) relative emitting strength (%) 10 20 30 40 50 60 70 80 90 10 0 20 30 40 50 60 70 80 90 fig.6 directional pattern


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